Abstract

This study investigated the effect of annealing and thin films’ thickness on the optical and electrical properties of synthesized Silver Indium Telluride (AgInTe). High purity Silver (99.999%), Indium (99.999%) and Tellurium (99.999%) chips were deposited on SLG substrates using a Kurt Lesker evaporator to obtain two varying thickness of 350 Å and 250 Å for groups one and two respectively. The electrical and optical characterizations of the films were analysed using Keithly Four Point Probe and UV Spectrophotometer respectively. The electrical resistivities and conductivities of group one ranges from 1.93 x 10-4 Ωm to 1.37Ωm while for group two ranges from 1.58 x 104 Ωm to 1.08 Ωm. The energy band gap for group one varies from 1.14 eV to 1.19 eV and that of group two varies from 1.17 eV to 1.20 eV. The optical band gaps were found to be closer but the films with higher thickness have a higher energy band gaps at different annealing temperature when compared with their counterpart of smaller thickness. This revealed that varying thickness of the deposition has effect on the electrical and optical characteristics of the deposited AgInTe thin films.